feb.1999 CT30SM-12 600 20 30 30 60 250 C40 ~ +150 C40 ~ +150 4.8 v v v a a w c c g v ces ................................................................................ 600v i c ......................................................................................... 30a high speed switching low v ce saturation voltage 15.9max. 4.5 1.5 f 3.2 5.0 20.0 19.5min. 2 1.0 5.45 4.4 0.6 2.8 qwe 5.45 2 4 4 r q gate w collector e emitter r collector wr q e v ces v ges v gem i c i cm p c t j t stg outline drawing dimensions in mm mitsubishi insulated gate bipolar transistor CT30SM-12 general inverter ? ups use application ac & dc motor controls, general purpose invert- ers, ups, power supply switching, servo controls, etc. to-3p conditions symbol collector-emitter voltage gate-emitter voltage peak gate-emitter voltage collector current collector current (pulsed) maximum power dissipation junction temperature storage temperature weight maximum ratings (tc = 25 c) parameter ratings unit v ge = 0v v ce = 0v v ce = 0v typical value
feb.1999 v (br) ces i ges i ces v ge(th) v ce(sat) c ies c oes c res t d (on) t r t d (off) t f r th (j-c) mitsubishi insulated gate bipolar transistor CT30SM-12 general inverter ? ups use 600 4.5 v m a ma v v pf pf pf ns ns ns ns c/w 6.0 2.5 1480 180 54 30 135 135 250 0.5 1 7.5 3.0 0.50 i c = 1ma, v ge = 0v v ge = 30v, v ce = 0v v ce = 600v, v ge = 0v i c = 3.0ma, v ce = 10v i c = 30a, v ge = 15v v ce = 25v, v ge = 0v, f = 1mhz v cc = 300v, resistance load, i c = 30a, v ge = 15v, r ge = 20 w junction to case 0 2 4 6 8 10 0 4 8 12 16 20 i c = 60a 10a 30a t j = 25? 0 10 20 30 40 50 0246810 t j = 25? v ge = 20v 15v 12v 10v 11v 8v 9v output characteristics (typical) collector-emitter voltage v ce (v) collector current i c (a) collector-emitter saturation voltage characteristics (typical) gate-emitter voltage v ge (v) collector-emitter saturation voltage v ce(sat) (v) electrical characteristics (tj = 25 c) symbol unit parameter test conditions limits min. typ. max. collector-emitter breakdown voltage collector-emitter leakage current gate-emitter leakage current gate-emitter threshold voltage collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time thermal resistance performance curves
feb.1999 mitsubishi insulated gate bipolar transistor CT30SM-12 general inverter ? ups use 0 4 8 12 16 20 0 20406080100 v cc = 200v 300v 0 1 2 3 4 5 0 1020304050 v ge = 15v t j = 25? 0 10 20 30 40 50 0 4 8 12 16 20 v ce = 10v t j = 25? 10 1 10 2 2 3 5 7 10 3 2 3 5 7 10 4 2 3 5 7 10 0 357 2 10 1 357 2 10 2 357 3 2 t j = 25? v ge = 0v f = 1mh z cies coes cres 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 10 0 23 57 23 57 10 ? 23 57 10 ? 10 ? 10 0 23 57 10 1 10 ? 7 5 7 5 3 2 10 ? 3 2 23 57 10 ? 23 57 10 ? 10 0 10 1 23 57 10 2 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 t d(off) t d(on) t f t r t j = 25? v cc = 300v v ge = 15v r g = 20 w collector-emitter saturation voltage characteristics (typical) collector current i c (a) collector-emitter saturation voltage v ce (v) switching time-collector current characteristic (typical) collector current i c (a) switching time (ns) gate charge q g (nc) gate-emitter voltage vs. gate charge characteristic (typical) gate-emitter voltage v ge (v) collector current vs. gate emitter voltage characteristic (typical) gate-emitter voltage v ge (v) collector current i c (a) capacitance vs. collector-emitter voltage characteristic (typical) collector-emitter voltage v ce (v) capacitance cies, coes, cres (pf) pulse width t w (s) transient thermal impedance characteristics (typical) transient thermal impedance z th (j?)
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